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| MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e q VCES ................................................................................ 400V ICM .................................................................................... 200A TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1 Ratings 400 30 40 200 -40 ~ +150 -40 ~ +150 Unit V V V A C C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = 40V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 -- -- -- Typ. -- -- -- -- Max. -- 10 0.1 7.0 Unit V A A V Feb.1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000F 160 MAXIMUM PULSE COLLECTOR CURRENT 2000 PULSE COLLECTOR CURRENT ICM (A) MAIN CAPACITOR CM (F) 1600 120 < TC = 70C 1200 80 800 40 400 VCM = 350V TC < 70C = > VGE = 28V 160 180 200 220 240 0 0 10 20 30 40 50 0 140 GATE-EMITTER VOLTAGE VGE (V) PULSE COLLECTOR CURRENT ICP (A) Figure 1 Figure 2 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM Vtrig + - VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 180A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 200A 1000F Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 200A : full luminescence condition) of main condenser (CM=1000F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999 |
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